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| savantic semiconductor product specification silicon npn power transistors 2sd1975 2SD1975A d escription with to-3pl package complement to type 2sb1317/1317a wide area of safe operation high transition frequency f t applications for high power amplification optimum for the output stage of a hi-fi audio amplifier pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sd1975 180 v cbo collector-base voltage 2SD1975A open emitter 200 v 2sd1975 180 v ceo collector-emitter voltage 2SD1975A open base 200 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i cm collector current-peak 25 a t a =25 3.5 p c collector power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pl) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2sd1975 2SD1975A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =10a ;i b =1a 2.5 v v be emitter-base voltage i c =8a ; v ce =5v 1.8 v 2sd1975 v cb =180v; i e =0 i cbo collector cut-off current 2SD1975A v cb =200v; i e =0 50 a i ebo emitter cut-off current v eb =3v; i c =0 50 a h fe-1 dc current gain i c =20ma ; v ce =5v 20 h fe-2 dc current gain i c =1a ; v ce =5v 60 200 h fe-3 dc current gain i c =8a ; v ce =5v 20 f t transition frequency i c =0.5a ; v ce =5v 20 mhz c ob collector output capacitance f=1mhz;v cb =10v 200 pf h fe-2 classifications q s p 60-120 80-160 100-200 savantic semiconductor product specification 3 silicon npn power transistors 2sd1975 2SD1975A package outline fig.2 outline dimensions (unindicated tolerance: 0.50 mm) savantic semiconductor product specification 4 silicon npn power transistors 2sd1975 2SD1975A |
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